MBRP3045N -- Schottky Barrier Rectifier June 2008 MBRP3045N Schottky Barrier Rectifier Applications * Switched mode power supply * Freewheeling diodes Features * Low forward voltage drop * High frequency properties and switching speed * Guard ring for over-voltage protection 1.Anode 3.Anode 1 2. Cathode TO220 Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VRRM VR IF(AV) IFSM TJ, TSTG Parameter Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage Average Rectified Forward Current @ TC = 100C Non-repetitive Peak Surge Current (per diode) 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Value 45 45 30 200 -65 to +150 Units V V A A C Thermal Characteristics Symbol RJC Parameter Maximum Thermal Resistance, Junction to Case (per diode) Value 2.2 Units C/W Electrical Characteristics (per diode) Symbol VFM * Parameter Maximum Instantaneous Forward Voltage IF = 15A IF = 15A IF = 30A IF = 30A Maximum Instantaneous Reverse Current @ rated VR TC = 25 C TC = 125 C TC = 25 C TC = 125 C TC = 25 C TC = 125 C Value 0.65 0.57 0.80 0.65 1 80 Units V IRM * mA * Pulse Test: Pulse Width=300s, Duty Cycle=2% (c) 2008 Fairchild Semiconductor Corporation MBRP3045N Rev.A 1 www.fairchildsemi.com MBRP3045N -- Schottky Barrier Rectifier Typical Performance Characteristics 100 100 TJ=150 C o Reverse Current, I R[mA] Forward Current, I F[A] 10 10 TJ=125 C o 1 1 TJ=75 C 0.1 o TJ=125 C 0.1 o TJ=75 C TJ=25 C o o 0.01 TJ=25 C o 0.01 0.0 1E-3 0.5 1.0 1.5 0 10 20 30 40 Forward Voltage Drop, VF[V] Reverse Voltage, VR[V] Figure 1. Typical Forward Voltage Characteristics (per diode) Figure 2. Typical Reverse Current vs. Reverse Voltage (per diode) 10 o Juntion Capacitance, C J[pF] TJ=25 C 700 600 500 400 300 Transient Thermal Impedance [ C/W] o 1000 900 800 1 200 0 10 20 30 40 100 1m 10m 100m 1 10 Reverse Voltage, VR[V] Pulse Duration [s] Figure 3. Typical Junction Capacitance (per diode) Figure 4. Thermal Impedance Characteristics (per diode) 35 250 [A] F(AV) FSM 30 25 20 15 10 5 0 0 20 40 60 DC [A] Max. Forward Surge Current, I 80 100 o 225 200 175 150 125 100 75 50 1 10 100 Average Forward Current, I 120 140 160 Case Temperature, TC[ C] Number of Cycles @ 60Hz Figure 5. Forward Current Derating Curve Figure 6. Non-Repetitive Surge Current (per diode) www.fairchildsemi.com 2 (c) 2008 Fairchild Semiconductor Corporation MBRP3045N Rev. A MBRP3045N -- Schottky Barrier Rectifier Package Dimensions TO-220 Dimensions in Millimeters (c) 2008 Fairchild Semiconductor Corporation MBRP3045N Rev. A 3 www.fairchildsemi.com MBRP3045NMBRP3045N Schottky Barrier Rectifier TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) ADVANCE INFORMATION July 2007 (Arial 9pt), 56/30 Device Number Title (Arial Bold 18, 0/0) Features (Arial Bold 12, 12/6) n n n n Description Applications n n n Related Application Notess n
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Application Diagram Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM Figure 1. Application Diagram
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